Ultrafast avalanche photodetectors for imaging and ranging

Improving the time resolution and sensitivity of Avalanche Photodetectors (APDs-SPADs) is critical for increasing the resolution of Time-of-Flight imaging systems, optical communications, and fluorescence-based biosensors. My research is focused in enhancing the bandwidth, gain and detection efficiency of such detectors by controlling the depth of light absorption, delivering the light in critical regions of the semiconductor. This can be achieved by the implementation of novel photon trapping structures, that has been extensively studied in our lab and implemented in Silicon, Ge-on-Si and III-V photodetectors. 1

Silicon and Ge-on-Silicon PIN photodetectors for optical communications

We aim to enable monolithic integration of silicon photodiodes with the high-speed and responsivity with the receiver electronics in order to reduce the cost and improve the performance of short reach optical interconnects in data centers. In addition, we are developing highly sensitive Germanium on Silicon photodiodes. These photodiodes have potential for many applications, such as inter-/intra-datacenters, passive optical networks, metro and long-haul dense wavelength division multiplexing systems, eye-safe lidar systems, and quantum communications.

Photonic Integrated Biosensors

Silicon photonics allow the integration of ultra-sensitive biosensors in small, portable chips. I am collaborating the fabrication of photonic integrated molecular biosensor in a Silicon Nitride platform. The project involves the design of waveguides, splitters, MZI and ring resonators in a device and a system level. Such work is done in collaboration with the department of Chemical Engineering.